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                RB520G-30 Diodes Rev.C 2/3 』Electrical characteristic curves (Ta=25°C) 0 0.005 0.01 0.015 0.02 0 5 10 15 20 25 30 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS FORWARD CURRENT:IF(mA) REVERSE CURRENT:IR(nA) REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS CAPACITANCE BETWEEN TERMINALS:Ct(pF) REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS VF DISPERSION MAP FORWARD VOLTAGE:VF(mV) REVERSE CURRENT:IR(nA) IR DISPERSION MAP CAPACITANCE BETWEEN TERMINALS:Ct(pF) Ct DISPERSION MAP IFSM DISRESION MAP PEAK SURGE FORWARD CURRENT:IFSM(A) PEAK SURGE FORWARD CURRENT:IFSM(A) NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS PEAK SURGE FORWARD CURRENT:IFSM(A) TIME:t(ms) IFSM-t CHARACTERISTICS TIME:t(s) Rth-t CHARACTERISTICS TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) FORWARD POWER DISSIPATION:Pf(W) AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS REVERSE POWER DISSIPATION:P R (W) REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS 0.001 0.01 0.1 1 10 100 1000 0 100 200 300 400 500 600 0.1 1 10 100 1000 10000 100000 1000000 0 102030 0 5 10 15 20 1 10 100 f=1MHｚ 320 330 340 350 360 370 Ta=25℃ VF=10mA n=30pcs 0 100 200 300 400 500 600 700 800 900 1000 AVE:100.5nA Ta=25℃ VR=10V n=30pcs 10 11 12 13 14 15 16 17 18 19 20 AVE:16.28pF Ta=25℃ f=1MHz VR=0V n=10pcs 0 5 10 15 20 AVE:4.20A 8.3ms Ifsm 1cyc 0 5 10 110100110100 8.3ms 8.3ms Ifsm 1cyc 0 5 10 t Ifsm 10 100 1000 0.001 0.1 10 1000 Rth(j-a) Rth(j-c) 1ms IM=10mA IF=100mA 300us time Mounted on epoxy board 0 0.02 0.04 0.06 0.08 0.1 0 0.05 0.1 0.15 0.2 AVE:347.5mV Ta=-25℃ Ta=125℃ Ta=75℃ Ta=25℃ Ta=-25℃ Ta=125℃ Ta=25℃ Ta=75℃ DC D=1/2 Sin(θ＝180) Sin(θ＝180) D=1/2 DC |